Here’s a structured feature set for a Proteus 8 library component of the IR2110 MOSFET/IGBT driver IC.
What this library includes:
Simulation Settings:
- Set HIN to a 50kHz square wave, 50% duty cycle, 5V amplitude.
- Set LIN to the same frequency, but with a dead time (use complementary pulses with delay).
- Run Interactive Simulation or Transient Analysis.
Electrical/Behavioral Modeling Assumptions
- VCC operating range modeled: 10–20 V; UVLO threshold ~10 V (configurable).
- Bootstrap charge path: simulated via diode + capacitor element; assumes external bootstrap diode and cap present in schematic.
- HO output swing: VB − VS with amplitude ~VCC (minus driver drop); LO output swing: 0–VCC.
- Drive capability: modeled as source/sink resistances (typical Rdrive ~1–3 Ω); allows realistic gate charge timing with MOSFET gates.
- Propagation delays: typical 200–400 ns; configurable in subcircuit.
- Thermal behavior: not modeled in Proteus library (recommend external derating and testing on hardware).
- Connect a diode (usually 1N4937 or UF4007) from the VCC pin to the VB pin. The anode goes to VCC, cathode to VB.
- Connect a capacitor (typically 10uF - 47uF) between VB and VS. This capacitor stores the charge needed to drive the high-side MOSFET gate.
- Without this capacitor, the High-Side output will not work in the simulation.
Enter the IR2110—Infineon’s legendary high-voltage, high-speed gate driver. It is the Swiss Army knife of driving floating power switches. But for years, simulating it accurately in Proteus 8 was a nightmare. Either the component was missing, or the default models failed to handle the bootstrap capacitor logic correctly.
